 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| New Product MBR(F,B)25H35CT thru MBR(F,B)25H60CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AB ITO-220AB 2 MBR25HxxCT PIN 1 PIN 3 PIN 2 CASE 3 1 MBRF25HxxCT PIN 1 PIN 3 PIN 2 2 3 1 TO-263AB K FEATURES * Guardring for overvoltage protection * Lower power losses, high efficiency * Low forward voltage drop * Low leakage current * High forward surge capability * High frequency operation * Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) * Solder dip 260 C, 40 s (for TO-220AB and ITO-220AB package) * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application. MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum 2 1 MBRB25HxxCT PIN 1 PIN 2 K HEATSINK PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF IR TJ max. 15 A x 2 35 V to 60 V 150 A 0.54 V, 0.60 V 100 A 175 C MAXIMUM RATINGS (TC = 25 C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum DC blocking voltage Max. average forward rectified current (Fig. 1) total device per diode SYMBOL VRRM VRWM VDC IF(AV) EAS IFSM IRRM 1.0 MBR25H35CT 35 35 35 MBR25H45CT 45 45 45 30 15 80 150 0.5 MBR25H50CT 50 50 50 MBR25H60CT 60 60 60 UNIT V V V A mJ A A Non-repetitive avalanche energy per diode at 25 C, IAS = 4 A, L = 10 mH Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Peak repetitive reverse surge current per diode at tp = 2.0 s, 1 kHz Document Number: 88789 Revision: 19-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 New Product MBR(F,B)25H35CT thru MBR(F,B)25H60CT Vishay General Semiconductor MAXIMUM RATINGS (TC = 25 C unless otherwise noted) PARAMETER Peak non-repetitive reverse energy (8/20 s waveform) Electrostatic discharge capacitor voltage Human body model: C = 100 pF, R = 1.5 k Voltage rate of change (rated VR) Operating junction temperature range Storage temperature range Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min SYMBOL ERSM VC dV/dt TJ TSTG VAC MBR25H35CT MBR25H45CT MBR25H50CT MBR25H60CT UNIT mJ kV V/s C C V 25 25 10 000 - 65 to + 175 - 65 to + 175 1500 20 ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL MBR25H35CT MBR25H45CT TYP. Maximum instantaneous forward voltage per diode (1) Maximum reverse current at rated VR per diode (2) Notes: (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms IF = 15 A IF = 15 A IF = 30 A IF = 30 A TJ = 25 C TJ = 125 C TJ = 25 C TJ = 125 C TJ = 25 C TJ = 125 C 0.50 0.63 6.0 MAX. 0.64 0.54 0.74 0.67 100 20 MBR25H50CT MBR25H60CT TYP. 0.56 0.68 4.0 MAX. 0.70 0.60 0.85 0.72 100 20 UNIT VF V IR A mA THERMAL CHARACTERISTICS (TC = 25 C unless otherwise noted) PARAMETER Thermal resistance, junction to case per diode SYMBOL RJC MBR 1.5 MBRF 4.5 MBRB 1.5 UNIT C/W ORDERING INFORMATION (Example) PACKAGE TO-220AB ITO-220AB TO-263AB TO-263AB TO-220AB ITO-220AB TO-263AB TO-263AB Note: (1) Automotive grade AEC Q101 qualified PREFERRED P/N MBR25H45CT-E3/45 MBR25H45CT-E3/45 MBRB25H45CT-E3/45 MBRB25H45CT-E3/81 MBR25H45CTHE3/45 (1) MBR25H45CTHE3/45 (1) MBRB25H45CTHE3/45 (1) MBRB25H45CTHE3/81 (1) UNIT WEIGHT (g) 1.85 1.99 1.35 1.35 1.85 1.99 1.35 1.35 PACKAGE CODE 45 45 45 81 45 45 45 81 BASE QUANTITY 50/tube 50/tube 50/tube 800/reel 50/tube 50/tube 50/tube 800/reel DELIVERY MODE Tube Tube Tube Tape and reel Tube Tube Tube Tape and reel www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88789 Revision: 19-May-08 New Product MBR(F,B)25H35CT thru MBR(F,B)25H60CT Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 40 MBR, MBRB 30 100 Instantaneous Reverse Leakage Current (mA) Average Forward Current (A) 10 TJ = 150 C TJ = 125 C MBR25H35CT - MBR25H45CT MBR25H50CT - MBR25H60CT 1 20 MBRF 0.1 0.01 10 0.001 TJ = 25 C 0 0 25 50 75 100 125 150 175 0.0001 0 20 40 60 80 100 Case Temperature (C) Percent of Rated Peak Reverse Voltage (%) Figure 1. Forward Derating Curve (Total) Figure 4. Typical Reverse Characteristics Per Diode 150 10 000 TJ = TJ Max. 8.3 ms Single Half Sine-Wave TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p Peak Forward Surge Current (A) 100 75 Junction Capacitance (pF) 125 1000 50 25 MBR25H35CT - MBR25H45CT MBR25H50CT - MBR25H60CT 100 1 10 100 0.1 1 10 100 0 Number of Cycles at 60 Hz Reverse Voltage (V) Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode Figure 5. Typical Junction Capacitance Per Diode 100 TJ = 150 C 10 TJ = 25 C 1 TJ = 125 C 0.1 MBR25H35CT - MBR25H45CT MBR25H50CT - MBR25H60CT 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 10 Transient Thermal Impedance (C/W) Instantaneous Forward Current (A) 1 0.1 0.01 0.1 1 10 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode Document Number: 88789 Revision: 19-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 New Product MBR(F,B)25H35CT thru MBR(F,B)25H60CT Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) 3 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 45 REF. 0.404 (10.26) 0.384 (9.75) 0.076 (1.93) REF. 0.076 (1.93) REF. 7 REF. 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.135 (3.43) DIA. 0.122 (3.08) DIA. ITO-220AB 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 0.600 (15.24) 0.580 (14.73) PIN 0.671 (17.04) 0.651 (16.54) 7 REF. 0.350 (8.89) 0.330 (8.38) 1 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) PIN 2 1 2 3 7 REF. 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) 0.191 (4.85) 0.171 (4.35) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.035 (0.89) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.028 (0.71) 0.020 (0.51) TO-263AB 0.411 (10.45) 0.380 (9.65) 0.245 (6.22) MIN. K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.055 (1.40) 0.047 (1.19) 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) 0.33 (8.38) MIN. 0.190 (4.83) 0.160 (4.06) 0.055 (1.40) 0.045 (1.14) Mounting Pad Layout 0.42 (10.66) MIN. 0.624 (15.85) 0.591 (15.00) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) www.vishay.com 4 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88789 Revision: 19-May-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
Price & Availability of MBRF25H50CT
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |